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IRF10N40
POWER MOSFET
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
FEATURES
Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-220
SYMBOL
D
Top View
G ATE
SOU RCE
DRAIN
G
S
1 2 3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Total Power Dissipation Derate above 25 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds TJ = 25 (VDD = 100V, VGS = 10V, IL = 10A, L = 6mH, RG = 25 )
JC JA
Symbol ID IDM VGS VGSM PD TJ, TSTG EAS
Value 10 40 20 40 125 1.0 -55 to 150 300 1.7 62.5 260
Unit A V V W W/ mJ /W
Continue Non-repetitive
TL
Page 1
IRF10N40
POWER MOSFET
ORDERING INFORMATION
Part Number Package ...................IRF10N40..............................................TO-220
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25 .
IRF10N40 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 400 V, VGS = 0 V) (VDS = 400 V, VGS = 0 V, TJ = 125 ) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 5.0A) * Drain-Source On-Voltage (VGS = 10 V) (ID = 5.0 A) Forward Transconductance (VDS = 50 V, ID = 5.0A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 200 V, ID = 10.0 A, VGS = 10 V, RG = 10 ) * (VDS = 320 V, ID = 10.0 A, VGS = 10 V)* Symbol V(BR)DSS IDSS 0.25 1.0 IGSSF IGSSR VGS(th) RDS(on) VDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 2.0 100 ...............-100 4.0 nA nA V Min 400 Typ Max Units V mA
................0.4............... 0.55 6.0 ..4.0................ 1570 230 55 25 37 75 31 46 10 23 4.5 7.5 63 V mhos pF pF pF ns ns ns ns nC nC nC nH nH
Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25" from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 10.0 A, VGS = 0 V, dIS/dt = 100A/s)
VSD ton trr
.................2.0.................. V ** 250 ns ns
* Pulse Test: Pulse Width 300s, Duty Cycle ** Negligible, Dominated by circuit inductance
2%
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IRF10N40
POWER MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
Page 3

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